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1

Solid State Reaction and Operational Stability of Ruthenium Schottky Contact-on-6H-SiC Under Argon Annealing

Munthali, Kinnock V., Theron, Chris, Auret, F. Danie, Coelho, Sergio M. M., Njoroge, Eric

Journal:

Journal of Electronic Materials

Année:

2015

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2015

2

Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes

Munthali, Kinnock V., Theron, Chris, Auret, F. Danie, Coelho, Sergio M.M., Njoroge, Eric, Prinsloo, Linda

Journal:

Materials Science and Engineering: B

Année:

2014

Langue:

english

Fichier:

PDF, 1.75 MB

english, 2014

3

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali, Kinnock V., Theron, Chris, Danie Auret, F., Coelho, Sergio M.M., Prinsloo, Linda, Njoroge, Eric

Journal:

Journal of Nuclear Materials

Année:

2014

Langue:

english

Fichier:

PDF, 2.67 MB

english, 2014

4

Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

Auret, F. Danie, Deenapanray, Prakash N.K.

Journal:

Critical Reviews in Solid State and Material Sciences

Année:

2004

Langue:

english

Fichier:

PDF, 2.75 MB

english, 2004

5

Electronic and transformation properties of a metastable defect introduced in n -type GaAs by α-particle irradiation

Auret, F. Danie, Erasmus, Rudolph M., Goodman, Stewart A., Meyer, Walter E.

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 237 KB

english, 1995

6

Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers

F Danie Auret, SA Goodman, G Myburg, WO Barnard

Journal:

Année:

1995

Langue:

english

Fichier:

PDF, 506 KB

english, 1995

7

Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

F. Danie Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Hayes, J.M. Nel, Holger von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann

Journal:

Physica B: Condensed Matter

Année:

2007

Langue:

english

Fichier:

PDF, 178 KB

english, 2007

8

Preface

Danie Auret, Reinhardt Botha, Andrè Venter

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 1.43 MB

english, 2009

9

DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes

F. Danie Auret, S. A. Goodman, G. Myburg

Journal:

Journal of Electronic Materials

Année:

1992

Langue:

english

Fichier:

PDF, 515 KB

english, 1992

10

Preface

Danie Auret, Hendrik Swart, André Venter

Journal:

Physica B: Condensed Matter

Année:

2012

Langue:

english

Fichier:

PDF, 66 KB

english, 2012

11

Proceedings of the 4th South African Conference on Photonic Materials

André Venter, Danie Auret, Hendrick C. Swart

Journal:

Physica B: Condensed Matter

Année:

2012

Fichier:

PDF, 162 KB

2012

12

Preface

Auret, Danie, Swart, Hendrik, Venter, André

Journal:

Physica B: Condensed Matter

Année:

2014

Langue:

english

Fichier:

PDF, 135 KB

english, 2014

13

Observation of low-temperature annealing of a primary defect in gallium nitride

Schmidt, Matthias, Janse van Rensburg, P. Johan, de Meyer, Hannes, Meyer, Walter E., Auret, F. Danie

Journal:

Physica B: Condensed Matter

Année:

2014

Langue:

english

Fichier:

PDF, 272 KB

english, 2014

14

New electron irradiation induced electron trap in epitaxially grown Si-doped n-GaAs

Auret, F. Danie, Goodman, Stewart A., Meyer, Walter E.

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 310 KB

english, 1995

15

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Munthali, Kinnock V., Theron, Chris, Auret, F. Danie, Coelho, Sergio M. M., Prinsloo, Linda, Njoroge, Eric

Journal:

Brazilian Journal of Physics

Année:

2014

Langue:

english

Fichier:

PDF, 957 KB

english, 2014

16

Electrical Characterization of Proton Irradiated n-Type ZnO

Auret, F Danie, Hayes, Michael, Nel, Jackie, Meyer, Walter, Janse van Rensburg, Pieter Johan, Wesch, Werner, Wendler, E

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 81 KB

english, 2006

17

Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

Auret, F. Danie, Meyer, Walter E., Diale, M., Janse Van Rensburg, P.J., Song, S.F., Temst, Kristiaan, Vantomme, Andre

Journal:

Materials Science Forum

Année:

2011

Langue:

english

Fichier:

PDF, 292 KB

english, 2011

18

Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

Danie Auret, F., Goodman, S.A., Meyer, W.E.

Journal:

Materials Science Forum

Année:

1995

Fichier:

PDF, 403 KB

1995

19

Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

Goodman, Stewart A., Auret, F. Danie, Deenapanray, Prakash N. K., Myburg, Gerrit

Journal:

Japanese Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 927 KB

english, 1998

20

Electric Field Effect on the Emission of Electron-Irradiation-Induced Defects in n-GaAs

Goodman, Stewart A., Auret, F. Danie, Meyer, Walter E.

Journal:

Japanese Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 198 KB

english, 1994

21

Neutron Irradiation Induced Defects in Low Free Carrier Concentration Epitaxially Grown n-GaAs

Auret, F. Danie, Goodman, Stewart A., Wilson, Albertus, Myburg, Gerrit

Journal:

Japanese Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 220 KB

english, 1994

22

A Metastable Alpha-Particle Irradiation Induced Defect in n-GaAs

Auret, F. Danie, Erasmus, Rudolph M., Goodman, Stewart A.

Journal:

Japanese Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 373 KB

english, 1994

23

Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation

Omotoso, Ezekiel, Meyer, Walter E., Auret, F. Danie, Paradzah, Alexander T., Legodi, Matshisa J.

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2015

Langue:

english

Fichier:

PDF, 1.20 MB

english, 2015

24

Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

MUNTHALI, KINNOCK V, THERON, CHRIS, AURET, F DANIE, M COELHO, SERGIO M

Journal:

Bulletin of Materials Science

Année:

2015

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2015

25

Introduction and annealing of primary defects in proton-bombarded n-GaN

Schmidt, Matthias, de Meyer, Hannes, Johan Janse van Rensburg, Pieter, Ernst Meyer, Walter, Danie Auret, Francois

Journal:

physica status solidi (b)

Année:

2014

Langue:

english

Fichier:

PDF, 491 KB

english, 2014

26

Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure

Omotoso, Ezekiel, Meyer, Walter Ernst, Auret, Francois Danie, Martins Coelho, Sergio Manuel, Ngoepe, Phuti Ngako Mahloka

Journal:

Solid State Phenomena

Année:

2015

Langue:

english

Fichier:

PDF, 748 KB

english, 2015

27

Properties of a previously unobserved donor-related electrically active defect in Ge induced by alpha particle irradiation

Barnard, Abraham W., Meyer, Walter E., Auret, F. Danie

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2017

Langue:

english

Fichier:

PDF, 437 KB

english, 2017

28

Electrically active defects in p-type silicon after alpha-particle irradiation

Danga, Helga T., Auret, F. Danie, Tunhuma, Shandirai M., Omotoso, Ezekiel, Igumbor, Emmanuel, Meyer, Walter E.

Journal:

Physica B: Condensed Matter

Année:

2017

Langue:

english

Fichier:

PDF, 383 KB

english, 2017

29

Effect of radiation on the performance of activated carbon base supercapacitor: Part II. Influence of electron irradiation exposure on full cell

Barzegar, Farshad, Momodu, Damilola Y., Taghizadeh, Fatemeh, Auret, F. Danie, Manyala, Ncholu, Xia, Xiaohua

Journal:

Energy Procedia

Année:

2019

Langue:

english

Fichier:

PDF, 852 KB

english, 2019

30

Ti- and Fe-related charge transition levels in Î² â Ga 2 O 3

Zimmermann, Christian, Frodason, Ymir Kalmann, Barnard, Abraham Willem, Varley, Joel Basile, Irmscher, Klaus, Galazka, Zbigniew, Karjalainen, Antti, Meyer, Walter Ernst, Auret, Francois Danie, Vines,

Journal:

Applied Physics Letters

Année:

2020

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2020